MOSFET Infineon IPB60R099C6ATMA1, VDSS 600 V, ID 38 A, D2PAK (TO-263) de 3 pines, config. Simple
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
37,9 A
Tensión Máxima Drenador-Fuente
600 V
Tipo de Encapsulado
D2PAK (TO-263)
Tipo de montaje
Surface Mount
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
90 m.Ω
Modo de Canal
Mejora
Disipación de Potencia Máxima
278 W
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Profundidad
4.57mm
Número de Elementos por Chip
1
Temperatura de Funcionamiento Máxima
+150 ºC
Material del transistor
Si
Longitud:
10.31mm
Carga Típica de Puerta @ Vgs
119 nC a 10 V
Altura
9.45mm
Serie
CoolMOS C6
Temperatura de Funcionamiento Mínima
-55 °C
Tensión de diodo directa
0.9V
Datos del producto
MOSFET de potencia Infineon CoolMOS™C6/C7
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Información de stock no disponible temporalmente.
Vuelva a verificar más tarde.
P.O.A.
1000
P.O.A.
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
37,9 A
Tensión Máxima Drenador-Fuente
600 V
Tipo de Encapsulado
D2PAK (TO-263)
Tipo de montaje
Surface Mount
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
90 m.Ω
Modo de Canal
Mejora
Disipación de Potencia Máxima
278 W
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Profundidad
4.57mm
Número de Elementos por Chip
1
Temperatura de Funcionamiento Máxima
+150 ºC
Material del transistor
Si
Longitud:
10.31mm
Carga Típica de Puerta @ Vgs
119 nC a 10 V
Altura
9.45mm
Serie
CoolMOS C6
Temperatura de Funcionamiento Mínima
-55 °C
Tensión de diodo directa
0.9V
Datos del producto
MOSFET de potencia Infineon CoolMOS™C6/C7
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products