MOSFET Infineon IPB107N20N3GATMA1, VDSS 200 V, ID 88 A, D2PAK (TO-263) de 3 pines, , config. Simple
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
88 A
Tensión Máxima Drenador-Fuente
-160 V
Serie
OptiMOS
Tipo de Encapsulado
D2PAK (TO-263)
Tipo de montaje
Surface Mount
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
11 m.Ω
Modo de Canal
Mejora
Tensión de umbral de puerta máxima
4V
Tensión de umbral de puerta mínima
2V
Disipación de Potencia Máxima
300000 mW
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Ancho
9.45mm
Número de Elementos por Chip
1
Máxima Temperatura de Funcionamiento
+175 °C
Longitud
10.31mm
Carga Típica de Puerta @ Vgs
65 nC a 10 V
Altura
4.57mm
Temperatura Mínima de Operación
-55 °C
Datos del producto
MOSFET de potencia Infineon OptiMOS™3, 100 V y superior
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 4,361
Each (On a Reel of 1000) (Sin IVA)
1000
€ 4,361
Each (On a Reel of 1000) (Sin IVA)
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
88 A
Tensión Máxima Drenador-Fuente
-160 V
Serie
OptiMOS
Tipo de Encapsulado
D2PAK (TO-263)
Tipo de montaje
Surface Mount
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
11 m.Ω
Modo de Canal
Mejora
Tensión de umbral de puerta máxima
4V
Tensión de umbral de puerta mínima
2V
Disipación de Potencia Máxima
300000 mW
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Ancho
9.45mm
Número de Elementos por Chip
1
Máxima Temperatura de Funcionamiento
+175 °C
Longitud
10.31mm
Carga Típica de Puerta @ Vgs
65 nC a 10 V
Altura
4.57mm
Temperatura Mínima de Operación
-55 °C
Datos del producto
MOSFET de potencia Infineon OptiMOS™3, 100 V y superior
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products