MOSFET Infineon IPB065N15N3GATMA1, VDSS 150 V, ID 130 A, D2PAK-7 de 7 pines, , config. Simple
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
130 A
Tensión Máxima Drenador-Fuente
150 V
Tipo de Encapsulado
D2PAK-7
Tipo de montaje
Surface Mount
Conteo de Pines
7
Resistencia Máxima Drenador-Fuente
6.8 mΩ
Modo de Canal
Mejora
Disipación de Potencia Máxima
300000 mW
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Profundidad
4.57mm
Número de Elementos por Chip
1
Material del transistor
Si
Longitud:
10.31mm
Carga Típica de Puerta @ Vgs
70 nC a 10 V
Temperatura máxima de funcionamiento
+175 °C
Altura
9.45mm
Serie
OptiMOS 3
Temperatura de Funcionamiento Mínima
-55 °C
Tensión de diodo directa
1.2V
Datos del producto
MOSFET de potencia Infineon OptiMOS™3, 100 V y superior
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 2,607
Each (On a Reel of 1000) (Sin IVA)
1000
€ 2,607
Each (On a Reel of 1000) (Sin IVA)
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
130 A
Tensión Máxima Drenador-Fuente
150 V
Tipo de Encapsulado
D2PAK-7
Tipo de montaje
Surface Mount
Conteo de Pines
7
Resistencia Máxima Drenador-Fuente
6.8 mΩ
Modo de Canal
Mejora
Disipación de Potencia Máxima
300000 mW
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Profundidad
4.57mm
Número de Elementos por Chip
1
Material del transistor
Si
Longitud:
10.31mm
Carga Típica de Puerta @ Vgs
70 nC a 10 V
Temperatura máxima de funcionamiento
+175 °C
Altura
9.45mm
Serie
OptiMOS 3
Temperatura de Funcionamiento Mínima
-55 °C
Tensión de diodo directa
1.2V
Datos del producto
MOSFET de potencia Infineon OptiMOS™3, 100 V y superior
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products