MOSFET Infineon BSC028N06NSATMA1, VDSS 60 V, ID 100 A, TDSON de 8 pines, , config. Simple
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
100 A
Tensión Máxima Drenador-Fuente
-60 V
Tipo de Encapsulado
TDSON
Tipo de montaje
Surface Mount
Conteo de Pines
8
Resistencia Máxima Drenador-Fuente
4,2 mΩ
Modo de Canal
Mejora
Disipación de Potencia Máxima
83000 mW
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Profundidad
5.35mm
Número de Elementos por Chip
1
Máxima Temperatura de Funcionamiento
+150 ºC
Material del transistor
Si
Longitud:
6.1mm
Carga Típica de Puerta @ Vgs
37 nC a 10 V
Altura
1.1mm
Serie
OptiMOS 5
Temperatura de Funcionamiento Mínima
-55 °C
Tensión de diodo directa
1.2V
Datos del producto
MOSFET de potencia OptiMOS™5 de Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 1,085
Each (On a Reel of 5000) (Sin IVA)
5000
€ 1,085
Each (On a Reel of 5000) (Sin IVA)
5000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
100 A
Tensión Máxima Drenador-Fuente
-60 V
Tipo de Encapsulado
TDSON
Tipo de montaje
Surface Mount
Conteo de Pines
8
Resistencia Máxima Drenador-Fuente
4,2 mΩ
Modo de Canal
Mejora
Disipación de Potencia Máxima
83000 mW
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Profundidad
5.35mm
Número de Elementos por Chip
1
Máxima Temperatura de Funcionamiento
+150 ºC
Material del transistor
Si
Longitud:
6.1mm
Carga Típica de Puerta @ Vgs
37 nC a 10 V
Altura
1.1mm
Serie
OptiMOS 5
Temperatura de Funcionamiento Mínima
-55 °C
Tensión de diodo directa
1.2V
Datos del producto
MOSFET de potencia OptiMOS™5 de Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products