Módulo IGBT, 2MBI1000VXB-170E-50, N-Canal, 1 kA, 1.700 V, M272, 6-Pines

Código de producto RS: 761-3436Marca: FujiNúmero de parte de fabricante: 2MBI1000VXB-170E-50
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Documentos Técnicos

Especificaciones

Brand

Fuji

Corriente Máxima Continua del Colector

1 kA

Tensión Máxima Colector-Emisor

1700 V

Tensión Máxima Puerta-Emisor

±20V

Disipación de Potencia Máxima

6.25 kW

Tipo de Encapsulado

M272

Configuration

Series

Tipo de Montaje

Screw Mount

Tipo de Canal

N

Conteo de Pines

6

Dimensiones del Cuerpo

250 x 89 x 38mm

Datos del producto

Módulos IGBT de 2 paquetes, Fuji Electric

Field-Stop de sexta generación, serie V
Field-Stop de quinta generación, serie U/U4
NPT de cuarta generación, serie S

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

Módulo IGBT, 2MBI1000VXB-170E-50, N-Canal, 1 kA, 1.700 V, M272, 6-Pines

1

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P.O.A.

Módulo IGBT, 2MBI1000VXB-170E-50, N-Canal, 1 kA, 1.700 V, M272, 6-Pines
Información de stock no disponible temporalmente.

1

Disponible en múltiplos de 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Te podría interesar

Documentos Técnicos

Especificaciones

Brand

Fuji

Corriente Máxima Continua del Colector

1 kA

Tensión Máxima Colector-Emisor

1700 V

Tensión Máxima Puerta-Emisor

±20V

Disipación de Potencia Máxima

6.25 kW

Tipo de Encapsulado

M272

Configuration

Series

Tipo de Montaje

Screw Mount

Tipo de Canal

N

Conteo de Pines

6

Dimensiones del Cuerpo

250 x 89 x 38mm

Datos del producto

Módulos IGBT de 2 paquetes, Fuji Electric

Field-Stop de sexta generación, serie V
Field-Stop de quinta generación, serie U/U4
NPT de cuarta generación, serie S

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Te podría interesar