Módulo IGBT, 7MBR50UA-120-50, N-Canal, 50 A, 1.200 V, M711, 24-Pines Trifásico

Código de producto RS: 716-5668Marca: Fuji ElectricNúmero de parte de fabricante: 7MBR50UA-120-50
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Documentos Técnicos

Especificaciones

Brand

Fuji Electric

Corriente Máxima Continua del Colector

50 A

Tensión Máxima Colector-Emisor

1200 V

Tensión Máxima Puerta-Emisor

±20V

Disipación de Potencia Máxima

205000 mW

Tipo de Encapsulado

M711

Configuration

3 Phase Bridge

Tipo de montaje

PCB Mount

Tipo de Canal

N

Conteo de Pines

24

Transistor Configuration

3 Phase

Dimensiones del Cuerpo

107.5 x 45 x 17mm

Máxima Temperatura de Funcionamiento

+150 ºC

Datos del producto

Discretos IGBT, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Módulo IGBT, 7MBR50UA-120-50, N-Canal, 50 A, 1.200 V, M711, 24-Pines Trifásico

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P.O.A.

Módulo IGBT, 7MBR50UA-120-50, N-Canal, 50 A, 1.200 V, M711, 24-Pines Trifásico
Información de stock no disponible temporalmente.

1

Disponible en múltiplos de 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificaciones

Brand

Fuji Electric

Corriente Máxima Continua del Colector

50 A

Tensión Máxima Colector-Emisor

1200 V

Tensión Máxima Puerta-Emisor

±20V

Disipación de Potencia Máxima

205000 mW

Tipo de Encapsulado

M711

Configuration

3 Phase Bridge

Tipo de montaje

PCB Mount

Tipo de Canal

N

Conteo de Pines

24

Transistor Configuration

3 Phase

Dimensiones del Cuerpo

107.5 x 45 x 17mm

Máxima Temperatura de Funcionamiento

+150 ºC

Datos del producto

Discretos IGBT, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more