Módulo IGBT, 7MBP75RA-120-55, N-Canal, 75 A, 1.200 V, P 610, 22-Pines Trifásico

Código de producto RS: 716-5612Marca: Fuji ElectricNúmero de parte de fabricante: 7MBP75RA-120-55
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Documentos Técnicos

Especificaciones

Corriente Máxima Continua del Colector

75 A

Tensión Máxima Colector-Emisor

1200 V

Disipación de Potencia Máxima

500000 mW

Tipo de Encapsulado

P 610

Configuration

Trifásico

Tipo de montaje

PCB Mount

Tipo de Canal

N

Conteo de Pines

22

Transistor Configuration

3 Phase

Dimensiones del Cuerpo

109 x 88 x 22mm

Temperatura Mínima de Operación

-20 °C

Máxima Temperatura de Funcionamiento

+100 °C

Datos del producto

Discretos IGBT, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

Módulo IGBT, 7MBP75RA-120-55, N-Canal, 75 A, 1.200 V, P 610, 22-Pines Trifásico

P.O.A.

Módulo IGBT, 7MBP75RA-120-55, N-Canal, 75 A, 1.200 V, P 610, 22-Pines Trifásico
Información de stock no disponible temporalmente.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificaciones

Corriente Máxima Continua del Colector

75 A

Tensión Máxima Colector-Emisor

1200 V

Disipación de Potencia Máxima

500000 mW

Tipo de Encapsulado

P 610

Configuration

Trifásico

Tipo de montaje

PCB Mount

Tipo de Canal

N

Conteo de Pines

22

Transistor Configuration

3 Phase

Dimensiones del Cuerpo

109 x 88 x 22mm

Temperatura Mínima de Operación

-20 °C

Máxima Temperatura de Funcionamiento

+100 °C

Datos del producto

Discretos IGBT, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more