IGBT, ISL9V3040P3, N-Canal, 21 A, 450 V, TO-220AB, 3-Pines Simple
Documentos Técnicos
Especificaciones
Corriente Máxima Continua del Colector
21 A
Tensión Máxima Colector-Emisor
450 V
Tensión Máxima Puerta-Emisor
±14V
Disipación de Potencia Máxima
150000 mW
Tipo de Encapsulado
TO-220AB
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones
10.67 x 4.7 x 16.3mm
Temperatura de Funcionamiento Mínima
-40 ºC
Temperatura de Funcionamiento Máxima
+175 °C
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 118,76
€ 2,375 Each (In a Tube of 50) (Sin IVA)
50
€ 118,76
€ 2,375 Each (In a Tube of 50) (Sin IVA)
50
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Per Tubo |
|---|---|---|
| 50 - 50 | € 2,375 | € 118,76 |
| 100 - 450 | € 1,947 | € 97,35 |
| 500 - 950 | € 1,641 | € 82,05 |
| 1000 - 2450 | € 1,493 | € 74,63 |
| 2500+ | € 1,456 | € 72,78 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Corriente Máxima Continua del Colector
21 A
Tensión Máxima Colector-Emisor
450 V
Tensión Máxima Puerta-Emisor
±14V
Disipación de Potencia Máxima
150000 mW
Tipo de Encapsulado
TO-220AB
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones
10.67 x 4.7 x 16.3mm
Temperatura de Funcionamiento Mínima
-40 ºC
Temperatura de Funcionamiento Máxima
+175 °C
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products