IGBT, HGTG30N60C3D, N-Canal, 63 A, 600 V, TO-247, 3-Pines Simple
Documentos Técnicos
Especificaciones
Corriente Máxima Continua del Colector
63 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
TO-247
Tipo de Montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones
15.87 x 4.82 x 20.82mm
Temperatura Máxima de Funcionamiento
+150 ºC
Temperatura Mínima de Operación
-40 ºC
País de Origen
China
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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P.O.A.
30
P.O.A.
30
Documentos Técnicos
Especificaciones
Corriente Máxima Continua del Colector
63 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Tipo de Encapsulado
TO-247
Tipo de Montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones
15.87 x 4.82 x 20.82mm
Temperatura Máxima de Funcionamiento
+150 ºC
Temperatura Mínima de Operación
-40 ºC
País de Origen
China
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.