IGBT, HGTG30N60C3D, N-Canal, 63 A, 600 V, TO-247, 3-Pines Simple

Código de producto RS: 124-1670Marca: Fairchild SemiconductorNúmero de parte de fabricante: HGTG30N60C3D
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Documentos Técnicos

Especificaciones

Corriente Máxima Continua del Colector

63 A

Tensión Máxima Colector-Emisor

600 V

Tensión Máxima Puerta-Emisor

±20V

Tipo de Encapsulado

TO-247

Tipo de Montaje

Through Hole

Tipo de Canal

N

Conteo de Pines

3

Transistor Configuration

Single

Dimensiones

15.87 x 4.82 x 20.82mm

Temperatura Máxima de Funcionamiento

+150 ºC

Temperatura Mínima de Operación

-40 ºC

País de Origen

China

Datos del producto

IGBT discretos, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

IGBT, HGTG30N60C3D, N-Canal, 63 A, 600 V, TO-247, 3-Pines Simple

P.O.A.

IGBT, HGTG30N60C3D, N-Canal, 63 A, 600 V, TO-247, 3-Pines Simple
Información de stock no disponible temporalmente.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Te podría interesar

Documentos Técnicos

Especificaciones

Corriente Máxima Continua del Colector

63 A

Tensión Máxima Colector-Emisor

600 V

Tensión Máxima Puerta-Emisor

±20V

Tipo de Encapsulado

TO-247

Tipo de Montaje

Through Hole

Tipo de Canal

N

Conteo de Pines

3

Transistor Configuration

Single

Dimensiones

15.87 x 4.82 x 20.82mm

Temperatura Máxima de Funcionamiento

+150 ºC

Temperatura Mínima de Operación

-40 ºC

País de Origen

China

Datos del producto

IGBT discretos, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Te podría interesar