MOSFET Infineon IPD028N06NF2SATMA1, VDSS 60 V, ID 139 A, PG-TO252-3 de 3 pines, 2elementos
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
139 A
Tensión Máxima Drenador-Fuente
-60 V
Tipo de Encapsulado
PG-TO252-3
Tipo de Montaje
Surface Mount
Conteo de Pines
3
Modo de Canal
Mejora
Número de Elementos por Chip
2
Material del transistor
SiC
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€ 0,634
Each (On a Reel of 2000) (Sin IVA)
2000
€ 0,634
Each (On a Reel of 2000) (Sin IVA)
2000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
139 A
Tensión Máxima Drenador-Fuente
-60 V
Tipo de Encapsulado
PG-TO252-3
Tipo de Montaje
Surface Mount
Conteo de Pines
3
Modo de Canal
Mejora
Número de Elementos por Chip
2
Material del transistor
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products