MOSFET Infineon IPB029N06NF2SATMA1, VDSS 60 V, ID 120 A, PG-TO263-3 de 3 pines, 2elementos
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
120 A
Tensión Máxima Drenador-Fuente
-60 V
Tipo de Encapsulado
PG-TO263-3
Tipo de montaje
Surface Mount
Conteo de Pines
3
Modo de Canal
Mejora
Número de Elementos por Chip
2
Material del transistor
SiC
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€ 1,596
Each (Supplied on a Reel) (Sin IVA)
Empaque de Producción (Rollo)
50
€ 1,596
Each (Supplied on a Reel) (Sin IVA)
Empaque de Producción (Rollo)
50
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Per Rollo |
|---|---|---|
| 50 - 120 | € 1,596 | € 7,98 |
| 125 - 245 | € 1,492 | € 7,46 |
| 250 - 495 | € 1,387 | € 6,93 |
| 500+ | € 1,281 | € 6,40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
120 A
Tensión Máxima Drenador-Fuente
-60 V
Tipo de Encapsulado
PG-TO263-3
Tipo de montaje
Surface Mount
Conteo de Pines
3
Modo de Canal
Mejora
Número de Elementos por Chip
2
Material del transistor
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products