Módulo IGBT, 7MBR50VB-120-50, N-Canal, 50 A, 1.200 V, M712, 24-Pines Trifásico
Documentos Técnicos
Especificaciones
Brand
Fuji ElectricCorriente Máxima Continua del Colector
50 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
280000 mW
Tipo de Encapsulado
M712
Configuration
3 Phase Bridge
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
24
Transistor Configuration
3 Phase
Dimensiones del Cuerpo
122 x 62 x 17mm
Temperatura Máxima de Funcionamiento
+150 ºC
Datos del producto
Módulos IGBT de 7 paquetes, Fuji Electric
Serie V
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Price on asking
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Price on asking
1
Ideate. Create. Collaborate
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Documentos Técnicos
Especificaciones
Brand
Fuji ElectricCorriente Máxima Continua del Colector
50 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
280000 mW
Tipo de Encapsulado
M712
Configuration
3 Phase Bridge
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
24
Transistor Configuration
3 Phase
Dimensiones del Cuerpo
122 x 62 x 17mm
Temperatura Máxima de Funcionamiento
+150 ºC
Datos del producto
Módulos IGBT de 7 paquetes, Fuji Electric
Serie V
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products