IGBT, ISL9V5036S3ST, N-Canal, 46 A, 420 V, D2PAK (TO-263), 3-Pines Simple
Documentos Técnicos
Especificaciones
Corriente Máxima Continua del Colector
46 A
Tensión Máxima Colector-Emisor
420 V
Tensión Máxima Puerta-Emisor
±14V
Disipación de Potencia Máxima
250000 mW
Tipo de Encapsulado
D2PAK (TO-263)
Tipo de montaje
Montaje superficial
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
10.67 x 9.65 x 4.83mm
Temperatura Máxima de Funcionamiento
+175 °C
Temperatura Mínima de Operación
–40 °C
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 1.700,23
€ 2,125 Each (On a Reel of 800) (Sin IVA)
800
€ 1.700,23
€ 2,125 Each (On a Reel of 800) (Sin IVA)
800
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Corriente Máxima Continua del Colector
46 A
Tensión Máxima Colector-Emisor
420 V
Tensión Máxima Puerta-Emisor
±14V
Disipación de Potencia Máxima
250000 mW
Tipo de Encapsulado
D2PAK (TO-263)
Tipo de montaje
Montaje superficial
Tipo de Canal
N
Conteo de Pines
3
Transistor Configuration
Single
Dimensiones del Cuerpo
10.67 x 9.65 x 4.83mm
Temperatura Máxima de Funcionamiento
+175 °C
Temperatura Mínima de Operación
–40 °C
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products