IGBT, GT50JR22, N-Canal, 50 A, 600 V, TO-3P, 3-Pines, 1MHZ Simple
Documentos Técnicos
Especificaciones
Brand
ToshibaCorriente Máxima Continua del Colector
50 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±25V
Disipación de Potencia Máxima
230000 mW
Tipo de Encapsulado
TO-3P
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Configuración de transistor
Single
Dimensiones
15.5 x 4.5 x 20mm
Temperatura máxima de funcionamiento
+175 °C
Datos del producto
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 6,13
€ 6,13 Each (Sin IVA)
Estándar
1
€ 6,13
€ 6,13 Each (Sin IVA)
Estándar
1
Información de stock no disponible temporalmente.
Vuelva a verificar más tarde.
| Cantidad | Precio Unitario sin IVA |
|---|---|
| 1 - 9 | € 6,13 |
| 10 - 49 | € 3,89 |
| 50 - 124 | € 3,79 |
| 125 - 249 | € 3,76 |
| 250+ | € 3,67 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
ToshibaCorriente Máxima Continua del Colector
50 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±25V
Disipación de Potencia Máxima
230000 mW
Tipo de Encapsulado
TO-3P
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Velocidad de Conmutación
1MHz
Configuración de transistor
Single
Dimensiones
15.5 x 4.5 x 20mm
Temperatura máxima de funcionamiento
+175 °C
Datos del producto
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products