IGBT, STGB20H60DF, N-Canal, 40 A, 600 V, D2PAK (TO-263), 3-Pines Simple
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
40 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
167000 mW
Tipo de Encapsulado
D2PAK (TO-263)
Tipo de montaje
Montaje superficial
Tipo de Canal
N
Conteo de Pines
3
Configuración de transistor
Single
Dimensiones
10.4 x 9.35 x 4.6mm
Temperatura de Funcionamiento Mínima
-55 °C
Temperatura Máxima de Funcionamiento
+175 °C
Datos del producto
Discretos IGBT, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Price on asking
Each (In a Pack of 2) (Sin IVA)
Estándar
2
Price on asking
Each (In a Pack of 2) (Sin IVA)
Información de stock no disponible temporalmente.
Estándar
2
Información de stock no disponible temporalmente.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
STMicroelectronicsCorriente Máxima Continua del Colector
40 A
Tensión Máxima Colector-Emisor
600 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
167000 mW
Tipo de Encapsulado
D2PAK (TO-263)
Tipo de montaje
Montaje superficial
Tipo de Canal
N
Conteo de Pines
3
Configuración de transistor
Single
Dimensiones
10.4 x 9.35 x 4.6mm
Temperatura de Funcionamiento Mínima
-55 °C
Temperatura Máxima de Funcionamiento
+175 °C
Datos del producto
Discretos IGBT, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products