Transistor MOSFET onsemi NTR1P02LT1G, VDSS 20 V, ID 1.3 A, SOT-23 de 3 pines
Documentos Técnicos
Especificaciones
Brand
ON SemiconductorTipo de Canal
P
Corriente Máxima Continua de Drenaje
1.3 A
Tensión Máxima Drenador-Fuente
20 (canal N) V, -20 (canal P) V
Tipo de Encapsulado
SOT-23-5
Tipo de montaje
Montaje superficial
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
220 m.Ω
Modo de Canal
Mejora
Disipación de Potencia Máxima
400 mW
Tensión Máxima Puerta-Fuente
±12 V
Carga Típica de Puerta @ Vgs
5,5 nC a 4 V
Número de Elementos por Chip
1
Máxima Temperatura de Funcionamiento
+150 ºC
Largo
2.9mm
Profundidad
1.3mm
Temperatura de Funcionamiento Mínima
-55 °C
Altura
0.94mm
Datos del producto
MOSFETs - P-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.
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Price on asking
Each (In a Pack of 2) (Sin IVA)
2
Price on asking
Each (In a Pack of 2) (Sin IVA)
2
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Ideate. Create. Collaborate
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- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
ON SemiconductorTipo de Canal
P
Corriente Máxima Continua de Drenaje
1.3 A
Tensión Máxima Drenador-Fuente
20 (canal N) V, -20 (canal P) V
Tipo de Encapsulado
SOT-23-5
Tipo de montaje
Montaje superficial
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
220 m.Ω
Modo de Canal
Mejora
Disipación de Potencia Máxima
400 mW
Tensión Máxima Puerta-Fuente
±12 V
Carga Típica de Puerta @ Vgs
5,5 nC a 4 V
Número de Elementos por Chip
1
Máxima Temperatura de Funcionamiento
+150 ºC
Largo
2.9mm
Profundidad
1.3mm
Temperatura de Funcionamiento Mínima
-55 °C
Altura
0.94mm
Datos del producto
MOSFETs - P-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products