Módulo IGBT, 2MBi300VH-120-50, N-Canal, 360 A, 1.200 V, M276, 7-Pines
Documentos Técnicos
Especificaciones
Brand
FujiCorriente Máxima Continua del Colector
360 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
1.6 kW
Tipo de Encapsulado
M276
Configuración
Series
Tipo de montaje
Screw Mount
Tipo de Canal
N
Conteo de Pines
7
Dimensiones
108 x 62 x 30.5mm
Temperatura máxima de funcionamiento
+150 ºC
Datos del producto
Módulos IGBT de 2 paquetes, Fuji Electric
Field-Stop de sexta generación, serie V
Field-Stop de quinta generación, serie U/U4
NPT de cuarta generación, serie S
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Ideate. Create. Collaborate
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
FujiCorriente Máxima Continua del Colector
360 A
Tensión Máxima Colector-Emisor
1200 V
Tensión Máxima Puerta-Emisor
±20V
Disipación de Potencia Máxima
1.6 kW
Tipo de Encapsulado
M276
Configuración
Series
Tipo de montaje
Screw Mount
Tipo de Canal
N
Conteo de Pines
7
Dimensiones
108 x 62 x 30.5mm
Temperatura máxima de funcionamiento
+150 ºC
Datos del producto
Módulos IGBT de 2 paquetes, Fuji Electric
Field-Stop de sexta generación, serie V
Field-Stop de quinta generación, serie U/U4
NPT de cuarta generación, serie S
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products