IGBT, ISL9V3040P3, N-Canal, 21 A, 450 V, TO-220AB, 3-Pines Simple
Documentos Técnicos
Especificaciones
Corriente Máxima Continua del Colector
21 A
Tensión Máxima Colector-Emisor
450 V
Tensión Máxima Puerta-Emisor
±14V
Disipación de Potencia Máxima
150000 mW
Tipo de Encapsulado
TO-220AB
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Configuración de transistor
Single
Dimensiones
10.67 x 4.7 x 16.3mm
Temperatura de Funcionamiento Mínima
–40 °C
Temperatura Máxima de Operación
+175 °C
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 14,84
€ 2,969 Each (In a Pack of 5) (Sin IVA)
Estándar
5
€ 14,84
€ 2,969 Each (In a Pack of 5) (Sin IVA)
Estándar
5
Información de stock no disponible temporalmente.
Vuelva a verificar más tarde.
| Cantidad | Precio Unitario sin IVA | Per Pack |
|---|---|---|
| 5 - 5 | € 2,969 | € 14,84 |
| 10 - 95 | € 2,391 | € 11,96 |
| 100 - 495 | € 1,963 | € 9,82 |
| 500 - 995 | € 1,654 | € 8,27 |
| 1000+ | € 1,457 | € 7,29 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Corriente Máxima Continua del Colector
21 A
Tensión Máxima Colector-Emisor
450 V
Tensión Máxima Puerta-Emisor
±14V
Disipación de Potencia Máxima
150000 mW
Tipo de Encapsulado
TO-220AB
Tipo de montaje
Through Hole
Tipo de Canal
N
Conteo de Pines
3
Configuración de transistor
Single
Dimensiones
10.67 x 4.7 x 16.3mm
Temperatura de Funcionamiento Mínima
–40 °C
Temperatura Máxima de Operación
+175 °C
Datos del producto
IGBT discretos, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products