BJT & Bipolar Transistors

A Bipolar Transistor or BJT (Bipolar Junction Transistor) is a solid state, three-pin device made from three layers of silicon. A BJT is designed to amplify current, bipolar transistors can also function as a switch. There are two main types of transistor, PNP (positive negative positive) or NPN (negative positive negative).
How a Bipolar transistor is made
A bipolar transistor is made by joining two signal diodes back to back creating two PN junctions connected in series, sharing a common P or N terminal. By nature, silicon does not normally conduct electricity well. However, when silicon is treated with certain chemicals or impurities we can make the material and electrons behave in a different way. This process is called doping. The doping process improves the semiconductors ability to conduct electricity.
What does a bipolar transistor do?
As we said before a bipolar transistor has two possible functions, switching, and amplification. Due to the devices three layers of doped semiconductor material, supplying the transistor with a signal voltage enables the discrete component to act as an insulator or a conductor. This clever change provides the transistors with two basic functions, switching (digital) electronics or amplification (analog) electronics.
Types of transistor
Transistors are available in panel, surface and through hole mounting options in plastic package or metal can versions. All have three terminals or pins, the Base, the Collector, and the Emitter.
Where are bipolar transistors used?
Transistors are one of the most widely used discrete components in electronic designs and circuits. Transistors are used for the amplification of all types of electrical signals in circuits made up of individual components rather than ICs (integrated circuits).
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Part Details Brand Transistor Type Maximum DC Collector Current Maximum Collector Emitter Voltage Package Type Mounting Type Maximum Power Dissipation Minimum DC Current Gain Transistor Configuration Maximum Collector Base Voltage Maximum Emitter Base Voltage Maximum Operating Frequency Pin Count Number of Elements per Chip Dimensions Maximum Collector Emitter Saturation Voltage Maximum Base Emitter Saturation Voltage Height Length Width Minimum Operating Temperature Maximum Operating Temperature Diameter Transistor Material
ON Semi NSVF4015SG4T1G NPN Transistor, 100 mA, 12 V, 4-Pin SC-82FL
  • £ 0.127
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ON Semiconductor NPN 100 mA 12 V SC-82FL Surface Mount 450 mW 60 Single 20 V 2 V 1 GHz 4 1 2 x 1.6 x 0.85mm - - 0.85mm 2mm 1.6mm -55 °C +150 °C - -
ON Semi NSVF4017SG4T1G NPN Transistor, 100 mA, 12 V, 4-Pin SC-82FL
  • £ 0.127
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ON Semiconductor NPN 100 mA 12 V SC-82FL Surface Mount 450 mW 60 Single 20 V 2 V 1 GHz 4 1 2 x 1.6 x 0.85mm - - 0.85mm 2mm 1.6mm -55 °C +150 °C - -
Dual NPN + PNP Transistor, 100 ((Continuous) NPN) mA, 200 ((Peak) PNP) mA, 30V, 6-Pin SOT-363 ON Semiconductor NPN + PNP 100 ((Continuous) NPN) mA, 200 ((Peak) PNP) mA 30 (NPN) V, -30 (PNP) V SOT-363 Surface Mount 380 mW 200 - 30 (NPN) V, -30 (PNP) V 6 (NPN) V, -6 (PNP) V 100 MHz 6 2 2.2 x 1.35 x 1mm 0.6 V 0.9 V 1mm 2.2mm 1.35mm -55 °C +150 °C - -
Dual NPN + PNP Transistor, 100 ((Continuous) NPN) mA, 200 ((Peak) PNP) mA, 30V, 6-Pin SOT-363
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ON Semiconductor NPN + PNP 100 ((Continuous) NPN) mA, 200 ((Peak) PNP) mA 30 (NPN) V, -30 (PNP) V SOT-363 Surface Mount 380 mW 200 - 30 (NPN) V, -30 (PNP) V 6 (NPN) V, -6 (PNP) V 100 MHz 6 2 2.2 x 1.35 x 1mm 0.6 V 0.9 V 1mm 2.2mm 1.35mm -55 °C +150 °C - -
Dual NPN + PNP Transistor, 100 ((Continuous) NPN) mA, 200 ((Peak) PNP) mA, 45, 6-Pin SOT-363
  • £ 0.026
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ON Semiconductor NPN + PNP 100 ((Continuous) NPN) mA, 200 ((Peak) PNP) mA 45 (NPN) V, -45 (PNP) V SOT-363 Surface Mount 380 mW 200 - 50 (NPN) V, -50 (PNP) V 6 (NPN) V, -6 (PNP) V 100 MHz 6 2 2.2 x 1.35 x 1mm 0.6 V 0.9 V 1mm 2.2mm 1.35mm -55 °C +150 °C - -
Dual NPN + PNP Transistor, 100 ((Continuous) NPN) mA, 200 ((Peak) PNP) mA, 45, 6-Pin SOT-363 ON Semiconductor NPN + PNP 100 ((Continuous) NPN) mA, 200 ((Peak) PNP) mA 45 (NPN) V, -45 (PNP) V SOT-363 Surface Mount 380 mW 200 - 50 (NPN) V, -50 (PNP) V 6 (NPN) V, -6 (PNP) V 100 MHz 6 2 2.2 x 1.35 x 1mm 0.6 V 0.9 V 1mm 2.2mm 1.35mm -55 °C +150 °C - -
Dual PNP Transistor, 100 (Continuous) mA, 200 (Peak) mA, -65 V, 6-Pin SOT-363 ON Semiconductor PNP 100 (Continuous) mA, 200 (Peak) mA -65 V SOT-363 Surface Mount 380 mW 220 - -80 V -5 V 100 MHz 6 2 2.2 x 1.35 x 1mm -0.65 V -0.9 V 1mm 2.2mm 1.35mm -55 °C +150 °C - -
Dual PNP Transistor, 100 (Continuous) mA, 200 (Peak) mA, -65 V, 6-Pin SOT-363
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ON Semiconductor PNP 100 (Continuous) mA, 200 (Peak) mA -65 V SOT-363 Surface Mount 380 mW 220 - -80 V -5 V 100 MHz 6 2 2.2 x 1.35 x 1mm -0.65 V -0.9 V 1mm 2.2mm 1.35mm -55 °C +150 °C - -
NPN Transistor, 1 (Continuous) A, 3 (Peak) A, 60 V dc, 3-Pin TO-225 ON Semiconductor NPN 1 (Continuous) A, 3 (Peak) A 60 V dc TO-225 Through Hole 30 W 10 Single 60 V dc 5 V dc 1 MHz 3 1 7.8 x 3 x 11.1mm 0.6 V dc 1.3 V dc 11.1mm 7.8mm 3mm -65 °C +150 °C - Si
NPN Transistor, 1 (Continuous) A, 3 (Peak) A, 60 V dc, 3-Pin TO-225 ON Semiconductor NPN 1 (Continuous) A, 3 (Peak) A 60 V dc TO-225 Through Hole 30 W 10 Single 60 V dc 5 V dc 1 MHz 3 1 7.8 x 3 x 11.1mm 0.6 V dc 1.3 V dc 11.1mm 7.8mm 3mm -65 °C +150 °C - Si
NPN Transistor, 10 (Continuous) A, 20 (Peak) A, 80 V dc, 3 + Tab-Pin D2PAK ON Semiconductor NPN 10 (Continuous) A, 20 (Peak) A 80 V dc D2PAK Surface Mount 50 W 40 Single - 5 V dc 1 MHz 3 + Tab 1 10.29 x 9.65 x 4.83mm 1 V dc 1.5 V dc 4.83mm 10.29mm 9.65mm -55 °C +150 °C - Si
NPN Transistor, 10 (Continuous) A, 20 (Peak) A, 80 V dc, 3 + Tab-Pin D2PAK ON Semiconductor NPN 10 (Continuous) A, 20 (Peak) A 80 V dc D2PAK Surface Mount 50 W 40 Single - 5 V dc 1 MHz 3 + Tab 1 10.29 x 9.65 x 4.83mm 1 V dc 1.5 V dc 4.83mm 10.29mm 9.65mm -55 °C +150 °C - Si
NPN Transistor, 10 (Peak) A, 5 (Continuous) A, 40 V dc, 3-Pin TO-225 ON Semiconductor NPN 10 (Peak) A, 5 (Continuous) A 40 V dc TO-225 Through Hole 15 W 10 Single 25 V dc 8 V dc 10 MHz 3 1 7.8 x 3 x 11.1mm 1.8 V dc 2.5 V dc 11.1mm 7.8mm 3mm -65 °C +150 °C - Si
NPN Transistor, 10 (Peak) A, 5 (Continuous) A, 40 V dc, 3-Pin TO-225 ON Semiconductor NPN 10 (Peak) A, 5 (Continuous) A 40 V dc TO-225 Through Hole 15 W 10 Single 25 V dc 8 V dc 10 MHz 3 1 7.8 x 3 x 11.1mm 1.8 V dc 2.5 V dc 11.1mm 7.8mm 3mm -65 °C +150 °C - Si
NPN Transistor, 10 A, 100 V dc, 3-Pin TO-218 ON Semiconductor NPN 10 A 100 V dc TO-218 Through Hole 125 W 1000 Single 100 V dc 5 V dc - 3 1 10.53 x 4.83 x 15.75mm 2 V dc 2.5 V dc 15.75mm 10.53mm 4.83mm -65 °C +150 °C - Si
NPN Transistor, 10 A, 50 V, 3-Pin TO-220F-3FS ON Semiconductor NPN 10 A 50 V TO-220F-3FS Through Hole 25 W 200 Single 60 V 5 V 1 MHz 3 1 10.16 x 4.7 x 15.87mm 360 mV 1.2 V 15.87mm 10.16mm 4.7mm -55 °C +150 °C - -
NPN Transistor, 100 (Continuous) mA, 30 V dc, 3-Pin SOT-23 ON Semiconductor NPN 100 (Continuous) mA 30 V dc SOT-23 Surface Mount 300 mW 420 Single 30 V dc 5 V 100 MHz 3 1 3.04 x 1.4 x 1.01mm 0.6 V 0.9 V 1.01mm 3.04mm 1.4mm -55 °C +150 °C - Si
NPN Transistor, 100 (Continuous) mA, 30 V dc, 3-Pin SOT-23 ON Semiconductor NPN 100 (Continuous) mA 30 V dc SOT-23 Surface Mount 300 mW 420 Single 30 V dc 5 V 100 MHz 3 1 3.04 x 1.4 x 1.01mm 0.6 V 0.9 V 1.01mm 3.04mm 1.4mm -55 °C +150 °C - Si
NPN Transistor, 100 mA, 30 V, 3-Pin TO-92 ON Semiconductor NPN 100 mA 30 V TO-92 Through Hole 500 mW 110 Single 30 V 5 V 100 MHz 3 1 5.2 x 4.19 x 5.33mm 600 mV 900 mV 5.33mm 5.2mm 4.19mm - +150 °C - Si
NPN Transistor, 100 mA, 30 V, 3-Pin TO-92
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ON Semiconductor NPN 100 mA 30 V TO-92 Through Hole 500 mW 110 Single 30 V 5 V 100 MHz 3 1 5.2 x 4.19 x 5.33mm 600 mV 900 mV 5.33mm 5.2mm 4.19mm - +150 °C - Si
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