N-Channel MOSFET, 65 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SIR668DP-T1-RE3

RS Stock No.: 134-9725Brand: VishayManufacturers Part No.: SIR668DP-T1-RE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

100 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.05 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.26mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.25mm

Typical Gate Charge @ Vgs

72 nC @ 10 V

Height

1.12mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Product details

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 1.713

Each (In a Pack of 2) (Exc. Vat)

N-Channel MOSFET, 65 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SIR668DP-T1-RE3
Select packaging type

€ 1.713

Each (In a Pack of 2) (Exc. Vat)

N-Channel MOSFET, 65 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SIR668DP-T1-RE3
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

QuantityUnit pricePer Pack
2 - 18€ 1.713€ 3.43
20 - 98€ 1.455€ 2.91
100 - 198€ 1.267€ 2.54
200 - 498€ 1.044€ 2.09
500+€ 0.968€ 1.94

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

100 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.05 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.26mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.25mm

Typical Gate Charge @ Vgs

72 nC @ 10 V

Height

1.12mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Product details

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more