Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
150 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
69.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Length
6.25mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Product details
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
€ 1.34
Each (In a Pack of 5) (Exc. Vat)
5
€ 1.34
Each (In a Pack of 5) (Exc. Vat)
5
Buy in bulk
Quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | € 1.34 | € 6.70 |
50 - 120 | € 1.258 | € 6.29 |
125 - 245 | € 1.139 | € 5.70 |
250 - 495 | € 1.071 | € 5.36 |
500+ | € 1.003 | € 5.02 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
150 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
69.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Length
6.25mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Product details