MOSFET onsemi FDMA8051L, VDSS 40 V, ID 10 A, MicroFET 2 x 2 de 6 pines, , config. Simple
Documentos Técnicos
Especificaciones
Brand
onsemiTipo de Canal
N
Maximum Continuous Drain Current
10 A
Tensión Máxima Drenador-Fuente
40 V
Serie
PowerTrench
Tipo de Encapsulado
MicroFET 2 x 2
Tipo de montaje
Montaje superficial
Conteo de Pines
6
Resistencia Máxima Drenador-Fuente
19 mΩ
Modo de Canal
Mejora
Tensión de umbral de puerta mínima
1V
Disipación de Potencia Máxima
2,4 W, 900 mW
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Número de Elementos por Chip
1
Máxima Temperatura de Funcionamiento
+150 ºC
Longitud
2mm
Carga Típica de Puerta @ Vgs
14 nC a 10 V
Ancho
2mm
Material del transistor
Si
Mínima Temperatura de Funcionamiento
-55 °C
Altura
0.75mm
Datos del producto
MOSFET de canal N PowerTrench®, de 10 A a 19,9 A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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€ 0,351
Each (In a Pack of 10) (Sin IVA)
Estándar
10
€ 0,351
Each (In a Pack of 10) (Sin IVA)
Estándar
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
onsemiTipo de Canal
N
Maximum Continuous Drain Current
10 A
Tensión Máxima Drenador-Fuente
40 V
Serie
PowerTrench
Tipo de Encapsulado
MicroFET 2 x 2
Tipo de montaje
Montaje superficial
Conteo de Pines
6
Resistencia Máxima Drenador-Fuente
19 mΩ
Modo de Canal
Mejora
Tensión de umbral de puerta mínima
1V
Disipación de Potencia Máxima
2,4 W, 900 mW
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Número de Elementos por Chip
1
Máxima Temperatura de Funcionamiento
+150 ºC
Longitud
2mm
Carga Típica de Puerta @ Vgs
14 nC a 10 V
Ancho
2mm
Material del transistor
Si
Mínima Temperatura de Funcionamiento
-55 °C
Altura
0.75mm
Datos del producto
MOSFET de canal N PowerTrench®, de 10 A a 19,9 A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products