IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole
Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
430 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
625 W
Number of Transistors
1
Package Type
TO-247AD
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
5 → 30kHz
Transistor Configuration
Single
Dimensions
16.1 x 5.2 x 21.3mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Energy Rating
5.2mJ
Country of Origin
Philippines
Product details
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 322.14
€ 10.738 Each (In a Tube of 30) (Exc. VAT)
30
€ 322.14
€ 10.738 Each (In a Tube of 30) (Exc. VAT)
30
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Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
430 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
625 W
Number of Transistors
1
Package Type
TO-247AD
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
5 → 30kHz
Transistor Configuration
Single
Dimensions
16.1 x 5.2 x 21.3mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Energy Rating
5.2mJ
Country of Origin
Philippines
Product details
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products