N-Channel MOSFET, 46 A, 700 V, 4-Pin TO-247-4 Infineon IPZ65R045C7XKSA1

RS Stock No.: 145-9726Brand: InfineonManufacturers Part No.: IPZ65R045C7XKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

46 A

Maximum Drain Source Voltage

700 V

Series

CoolMOS™ C7

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

227 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

21.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

93 nC @ 10 V

Height

5.21mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Country of Origin

China

Product details

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 5.055

Each (In a Tube of 30) (Exc. VAT)

N-Channel MOSFET, 46 A, 700 V, 4-Pin TO-247-4 Infineon IPZ65R045C7XKSA1

€ 5.055

Each (In a Tube of 30) (Exc. VAT)

N-Channel MOSFET, 46 A, 700 V, 4-Pin TO-247-4 Infineon IPZ65R045C7XKSA1
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

46 A

Maximum Drain Source Voltage

700 V

Series

CoolMOS™ C7

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

227 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

21.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

93 nC @ 10 V

Height

5.21mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Country of Origin

China

Product details

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more