MOSFET Infineon IPB029N06NF2SATMA1, VDSS 60 V, ID 120 A, PG-TO263-3 de 3 pines, 2elementos
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
120 A
Tensión Máxima Drenador-Fuente
-60 V
Tipo de Encapsulado
PG-TO263-3
Tipo de montaje
Montaje superficial
Conteo de Pines
3
Modo de Canal
Mejora
Número de Elementos por Chip
2
Material del transistor
SiC
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€ 673,20
€ 0,842 Each (On a Reel of 800) (Sin IVA)
800
€ 673,20
€ 0,842 Each (On a Reel of 800) (Sin IVA)
800
Comprar en grandes cantidades
| Cantidad | Precio Unitario sin IVA | Per Rollo |
|---|---|---|
| 800 - 800 | € 0,842 | € 673,20 |
| 1600+ | € 0,799 | € 639,30 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Maximum Continuous Drain Current
120 A
Tensión Máxima Drenador-Fuente
-60 V
Tipo de Encapsulado
PG-TO263-3
Tipo de montaje
Montaje superficial
Conteo de Pines
3
Modo de Canal
Mejora
Número de Elementos por Chip
2
Material del transistor
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products