Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
5.1 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
3.04mm
Width
1.4mm
Typical Gate Charge @ Vgs
15 nC @ 4.5 V, 9 nC @ 2.5 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
China
Product details
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
10
P.O.A.
10
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
5.1 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
3.04mm
Width
1.4mm
Typical Gate Charge @ Vgs
15 nC @ 4.5 V, 9 nC @ 2.5 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
China
Product details