Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
6 A
Maximum Collector Emitter Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
65 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.28 x 4.82 x 15.75mm
Country of Origin
China
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
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€ 0.99
Each (In a Tube of 50) (Exc. Vat)
50
€ 0.99
Each (In a Tube of 50) (Exc. Vat)
50
Buy in bulk
Quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | € 0.99 | € 49.50 |
100 - 450 | € 0.782 | € 39.11 |
500 - 950 | € 0.662 | € 33.10 |
1000 - 2450 | € 0.538 | € 26.91 |
2500+ | € 0.536 | € 26.79 |
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
6 A
Maximum Collector Emitter Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
65 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.28 x 4.82 x 15.75mm
Country of Origin
China
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.